Nitrogen ratio and RTA optimization on sputtered TiN/SiO/Si electrolyte-insulator-semiconductor structure for pH sensing characteristics

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作者: Ren, Chang Yang, Chia-Ming Lyu, Chengang Hsu, Chin-Yuan Chen, Tsung-Cheng Wang, Hau-Cheng Yang, Hao Lin, Wei-Tse Juan, Pi-Chun Huang, Chi-Hsien Pijanowska, Dorota G. Wang, Jer-Chyi Tsai, Jung-Ruey

作者单位: g Nalecz Institute of Biocybernetics and Biomedical Engineering, Polish Academy of Sciences, Warsaw, 02-109, Poland Healthy Aging Research Center, Chang Gung University, 259 Wen-Hwa 1st Road, Taoyuan, 333, Taiwan Center for Biomedical Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Taoyuan, 333, Taiwan h Department of Photonics and Communication Engineering, Asia University, Wufeng, 500 Lioufeng Rd., Taichung, 41354, Taiwan f Department of Materials Engineering, Center for Thin Film Technologies and Applications, Ming Chi University of Technology, Taishan, 243, Taiwan Department of Electronic Engineering, Chang Gung University, Taoyuan, 333, Taiwan Institute of Electro-Optical Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Taoyuan, 333, Taiwan i Department of Medical Research, China Medical University Hospital, China Medical University, No. 2, Yude Rd., North Dist., Taichung, 404, Taiwan a School of Electronic Information Engineering, Tianjin University, Tianjin, 300072, China

摘要: Sputtered titanium nitride with a novel N 2 ratio adjustment and rapid thermal annealing treatment are proposed in order to optimize pH sensing performance of electrolyte-insulator-semiconductor structure. Selection of this methodology, which can be easily applied into standard CMOS and DRAM technology, results from the fact that TiN is a well-verified material as a buffer or a barrier layer. It was concluded that pH sensitivity of the order of 60.5 mV/pH and linearity of 99.9% could be obta...更多; Sputtered titanium nitride with a novel N 2 ratio adjustment and rapid thermal annealing treatment are proposed in order to optimize pH sensing performance of electrolyte-insulator-semiconductor structure. Selection of this methodology, which can be easily applied into standard CMOS and DRAM technology, results from the fact that TiN is a well-verified material as a buffer or a barrier layer. It was concluded that pH sensitivity of the order of 60.5 mV/pH and linearity of 99.9% could be obtained for a TiN/SiO 2 EIS structure treated with N 2 ratio of 20% and RTA at 800°C, which could be a good candidate in sensor applications. This performance is stable for more than two months. Higher surface roughness shown in atomic force microscope analysis and high oxygen level in sputtering process shown in x-ray photo photoelectron spectroscopy could be the reasons for the high sensitivity of the fabricated TiN sensing layer.收起

学科: 【SCI学科】MATERIALS SCIENCE, MULTIDISCIPLINARY;MATERIALS SCIENCE;PHYSICS, APPLIED 【ESI学科】MATERIALS SCIENCE

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